| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion semiconductor layer changing potential in the thickness direction, manufacturable further inexpensively relative to vacuum film formation, and providing high photoelectric conversion efficiency. <P>SOLUTION: This photoelectric conversion semiconductor layer 30X generates a current by absorbing light, and is formed of a particle layer in which a plurality of particles 31 are arranged in plane and thickness directions. The photoelectric conversion semiconductor layer 30X contains, as the plurality of particles 31, a plurality of types of particles having different bandgaps, wherein the potential in the thickness direction preferably has a distribution. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
