发明名称 MULTI-WAVELENGTH SEMICONDUCTOR LASER DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a multi-wavelength semiconductor laser device which is easy to optically design, has superior heat dissipation characteristics, and is easy to manufacture. <P>SOLUTION: The multi-wavelength semiconductor laser device 100 includes a plate stem 10; a prism shaped submount 21 with a bottom face on the stem 10; a plurality of laser diodes LD31 to LD33 having emission wavelengths different from each other and mounted on lateral sides of the submount 21; and lead pins 41 to 43 penetrating the stem 10, located along and opposite edge lines 21a to 21c of the lateral sides of the submount 21, respective emission points 31a to 33a of the plurality of LDs 31 to 33 being positioned at substantially the same distance from a center axis 10z of the stem 10. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010251502(A) 申请公布日期 2010.11.04
申请号 JP20090098949 申请日期 2009.04.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 ABE SHINJI
分类号 H01S5/022 主分类号 H01S5/022
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