| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for dissipation heat at a heat generating body and its periphery, in the substrate of a semiconductor device, with high thermal conductivity. <P>SOLUTION: The heat-dissipation substrate 10 is formed by arranging many graphite sheets which are rectangular in plan view such that one side of each of the graphite sheets forms a part of a surface to be mounted with a semiconductor device 1 of the substrate 10 and another side sharing a vertex with the one side is in the thickness direction of the substrate, and then charging metal material 22 between the many graphite sheets. <P>COPYRIGHT: (C)2011,JPO&INPIT |
