DOPING OF SEMICONDUCTOR LAYER FOR IMPROVED EFFICIENCY OF SEMICONDUCTOR STRUCTURES

摘要

A system and method for variable doping within a semiconductor structure for improved efficiency is described. One embodiment includes a method for forming a semiconductor structure, the method comprising forming a first semiconductor layer, wherein the first semiconductor layer comprises a first semiconductor material, and forming a second semiconductor layer on the first semiconductor layer, wherein the second semiconductor layer comprises a second semiconductor material, wherein the second semiconductor material is an oppositely-typed semiconductor material from the first semiconductor material, and wherein the second semiconductor layer comprises a first region adjacent to the first semiconductor layer, wherein the first region comprises second semiconductor material, and a second region adjacent to the first region, wherein the second region comprises intentionally doped second semiconductor material to increase a built-in potential of the semiconductor structure.