| 摘要 |
The present invention relates to a process for producing polysilicon wafer and a dual temperature field chemical vapor deposition apparatus for implementing the process. The process for producing polysilicon wafer is based on the formation of the polysilicon wafer through the reaction of trichlorosilane with hydrogen on the substrate. The dual temperature field chemical vapor deposition apparatus includes a reactor and a substrate, wherein the reactor has a closed space defined by a gas-feeding unit, a reaction heating furnace, a substrate heating furnace, and a substrate housing box, the gas-feeding unit is positioned on the reaction heating furnace and is contact with a water-cooling unit at the outer wall of the reaction heating furnace, the substrate heating furnace is positioned under the reaction heating furnace, the substrate moves along the gap between the reaction heating furnace and the substrate heating furnace. The entire process for producing the polysilicon wafer of the present invention has many advantages that it involves simple equipment, low energy consumption and less material loss; the dual temperature field chemical vapor deposition apparatus, in comparison with the traditional chemical vapor deposition apparatus, has the advantage of being more versatile in its application along with its newly developed features.
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