| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide powder, by which it becomes possible to uniformly supply a sublimation gas of SiC and a sublimation gas of a dopant to a seed crystal and the possibility of mixing of impurities is reduced in the case when the dopant is mixed with an SiC raw material powder. SOLUTION: The method for producing a silicon carbide powder includes: a process for forming a liquid mixture 7 by mixing a silicon source, a carbon source, a reaction catalyst, and a vanadium-containing compound; a process for exhausting an exhaust gas while introducing an inert gas into the liquid mixture 7 under such a condition that the liquid mixture 7 is arranged in a reduced pressure atmosphere; a process for forming a solid substance 19 by drying and hardening the liquid mixture 7; and a process for forming the silicon carbide powder 25 by carbonizing and firing the solid substance 19 by heating it. COPYRIGHT: (C)2011,JPO&INPIT |
