BONDED STRUCTURE AND BONDING METHOD FOR BONDED STRUCTURE

摘要

On the surface (102b) of a semiconductor element (102), a metal layer (105) having a crystal lattice different from that of a bonding material (106) having Bi as a main component is disposed, and a layer (104) composed of an element having a positive value of heat of formation of a compound with the bonding material (106) is disposed between the metal layer (105) having the crystal lattice different from that of the bonding material (106) and the surface (102b) of the semiconductor element (102). Thus, the components of the metal layer (105) having the crystal lattice different from that of the bonding material (106) are prevented from diffusing in the semiconductor element (102).