| 摘要 |
<p>The present invention provides a silicon solar cell including numbers of scatterers 12 in a silicon substrate 10 of a pn junction structure where an n-type silicon substrate is formed on a p-type silicon substrate by diffusion of n-type impurities. The scatterers 12 scatter, upon irradiation of incident light 11, the irradiated light in all directions, as shown by a plurality of arrows 11a to 11g. Since scattered lights caused by the scatterers 12 travel in a long-length direction along a light-receiving surface 10a, a light pass-through length increases correspondingly, increasing light absorption. Even with holes (pipe-like holes) made in the light-receiving surface 10a of the silicon substrate 10 after an anodic oxidation process, as with a silicon substrate 10 having air spheres 12, a light internal survival rate is increased more than that of a normal silicon substrate. By a simpler manufacturing method where an annealing process is omitted, a silicon substrate having a light internal survival rate comparable with that of a silicon substrate having air spheres is manufactured.</p> |
