| 摘要 |
PURPOSE: A sputtering method is provided to reduce manufacturing costs by forming a thin film with a high sputter rate regardless of an insulation film which is formed in the periphery region of a target. CONSTITUTION: A gas pipe pressure part(3) is connected to a sputter chamber(11). The gas pipe pressure part is connected to a gas source part(33) through a gas pipe(32) including a mass flow controller(31). A target(41) applies a negative DC voltage through a sputter power part(E). The target is installed in the frame(44) of a magnetron sputter electrode(C) through an insulating plate(43). A shield(45), which can be used as an anode, is installed in the vicinity of the target.
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