发明名称 |
Method of joining a plurality of SOI substrates on a glass substrate by a heat treatment |
摘要 |
After the plurality of single-crystal semiconductor layers are provided adjacent to each other with a certain distance over a glass substrate which is a support substrate, heat treatment is performed on the glass substrate. The support substrate shrinks by this heat treatment, and the adjacent single-crystal semiconductor layers are in contact with each other due to the shrink. Energy beam irradiation is performed with the plurality of single-crystal semiconductor layers being in contact with each other, the plurality of single-crystal semiconductor layers are integrated, and thus a continuous single-crystal semiconductor layer is formed.
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申请公布号 |
US7825007(B2) |
申请公布日期 |
2010.11.02 |
申请号 |
US20080078410 |
申请日期 |
2008.03.31 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI |
分类号 |
H01L21/30;H01L21/301;H01L21/304;H01L21/46 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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