| 摘要 |
MOS transistors each having different ON withstanding voltages that are drain withstanding voltages when gates thereof are turned on are formed on the same substrate. One of the MOS transistors having the lower ON withstand voltage is used as a memory element. Using the fact that the drain withstanding voltage is low when a gate thereof is turned on, a short-circuit occurs in a PN junction between a drain and the substrate of the one of the MOS transistors having the lower ON withstand voltage to write data.
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