发明名称 |
Self-align planerized bottom electrode phase change memory and manufacturing method |
摘要 |
A method is described for self-aligning a bottom electrode in a phase change random access memory PCRAM device where a top electrode serves as a mask for self-aligning etching of the bottom electrode. The bottom electrode has a top surface that is planarized by chemical mechanical polishing. The top electrode also has a top surface that is planarized by chemical mechanical polishing. A bottom electrode layer like TiN is formed over a substrate and prior to the formation of a via during subsequent process steps. A first dielectric layer is formed over the bottom electrode layer, and a second dielectric layer is formed over the first dielectric layer. A via is formed at a selected section that extends through the first and second dielectric layers.
|
申请公布号 |
US7825396(B2) |
申请公布日期 |
2010.11.02 |
申请号 |
US20060351296 |
申请日期 |
2006.02.09 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|