| 摘要 |
In a method for reducing and/or eliminating mismatch in one or more devices that require a balanced state (e.g., in cross-coupled transistors in each memory cell and/or sense amp in a memory array), the bias (i.e., the preferred state) of each of the devices is determined. Then, a burn-in process is initiated, during which an individually selected state is applied to each of the devices. This fatigues the devices away from their preferred states and towards a balanced state. The bias is periodically reassessed during the burn-in process to avoid over-correction. By using this method both memory cell and sense-amplifier mismatch can be reduced in memory arrays, resulting in smaller timing uncertainty and therefore faster memories.
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