发明名称 |
Read-preferred SRAM cell design |
摘要 |
A method for operating a static random access memory (SRAM) cell includes providing the SRAM cell having a static read margin and a static write margin, wherein the static read margin is greater than the static write margin; applying a dynamic power to perform a write operation on the SRAM cell; and applying a static power to perform a read operation on the SRAM cell.
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申请公布号 |
US7826252(B2) |
申请公布日期 |
2010.11.02 |
申请号 |
US20080201725 |
申请日期 |
2008.08.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG PING-WEI;MII YUH-JIER;LIAO HUNG-JEN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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