发明名称 |
Method of reworking a semiconductor substrate and method of forming a pattern of a semiconductor device |
摘要 |
A method of reworking a semiconductor substrate and a method of forming a pattern of semiconductor device using the same without damage to an organic anti-reflective coating (ARC) is provided. The method of reworking a semiconductor substrate includes forming a photoresist pattern on a substrate having the organic ARC formed thereon. An entire surface of the substrate having the photoresist pattern formed thereon may be exposed when a defect is present in the photoresist pattern. The entire-surface-exposed photoresist pattern may be removed by performing a developing process without damage to the organic ARC.
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申请公布号 |
US7825041(B2) |
申请公布日期 |
2010.11.02 |
申请号 |
US20080068410 |
申请日期 |
2008.02.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM EUN-SUNG;KIM TAE-KYU;OH SEOK-HWAN |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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