PURPOSE: A solar cell is provided to improve efficiency by controlling a band gap voltage by doping impurities on an intrinsic semiconductor. CONSTITUTION: A front electrode(110) is formed on a substrate(100). A photoelectric conversion unit is formed on the front electrode. The photoelectric conversion unit includes a first photoelectric conversion unit(120) and a second photoelectric conversion unit(130). The photoelectric conversion unit includes an intrinsic semiconductor layer(132) made of micro crystalline silicon. A rear electrode(140) is formed on the photoelectric conversion unit.
申请公布号
KR100990111(B1)
申请公布日期
2010.10.29
申请号
KR20090076824
申请日期
2009.08.19
申请人
LG ELECTRONICS INC.
发明人
SHIM, HYUN JA;LEE, SEUNG YOON;YOU, DONG JOO;LEE, HEON MIN;HWANG, SUN TAE;AHN, SEH WON;EO, YOUNG JOO