| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an AlN (aluminum nitride) massive single crystal, and to provide a single crystal AlN substrate. SOLUTION: The method for producing the AlN massive single crystal is carried out by setting a single crystal AlN seed crystal 15 having a central longitudinal axis line 18 into a crystal growth region 4 of a crucible apparatus 3; forming an AlN growth gas phase 16 in the crystal growth region 4 during a growth stage where at least a part of an AlN raw material 21 in a storage region 5 of the crucible apparatus 3 is supplied to the AlN gas growth phase 16; precipitating an AlN massive single crystal 2 on the AlN seed crystal 15 from the AlN growth gas phase 16 and growing it to a growth direction 17 parallel to the central longitudinal axis line 18; reducing at least the ratio of oxygen of the AlN raw material 21 during a purification stage by depositing an oxygen-containing component vaporized from the AlN raw material 21 in a deposition chamber 8 placed at the crucible apparatus 3; and after completion of the purification stage, the AlN raw material 21 is kept in an oxygen-free atmosphere throughout the growth stage. COPYRIGHT: (C)2011,JPO&INPIT
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