发明名称 |
METHODS OF MANUFACTURING METAL-SILICIDE FEATURES |
摘要 |
A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening. The metal-silicide layer may then be annealed.
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申请公布号 |
US2010273324(A1) |
申请公布日期 |
2010.10.28 |
申请号 |
US20100833595 |
申请日期 |
2010.07.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN CHEN-TUNG;CHANG CHIH-WEI;WU CHII-MING;WANG MEI-YUN;CHUANG CHIANG-MING;SHUE SHAU-LIN |
分类号 |
H01L21/3205;C30B1/00;H01L21/20;H01L21/28;H01L21/285;H01L21/321;H01L21/336;H01L21/36;H01L21/768;H01L23/485;H01L29/06 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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