发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that a conventional transfer technique has low efficiency in separation at a separation layer and costs much. SOLUTION: A method of manufacturing a semiconductor device includes: a step of preparing a semiconductor substrate having a semiconductor layer formed on the separation layer; a separating and individualizing step of separating and individualizing at least the semiconductor layer for each second integrated circuit so that the end surfaces of the separation layer are inclined or curved; a step of bonding the plurality of semiconductor substrate thus separated and individualized to a support substrate to obtain a bonded structure; and a step of removing at least a portion of the separation layer which is exposed on the inclined or curved surfaces, and separating the bonded structure along the separation layer to obtain a support substrate to which the semiconductor layer is transferred. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010245287(A) 申请公布日期 2010.10.28
申请号 JP20090092316 申请日期 2009.04.06
申请人 CANON INC 发明人 YONEHARA TAKAO;SAKAGUCHI KIYOFUMI
分类号 H01L25/04;H01L23/12;H01L23/52;H01L25/18 主分类号 H01L25/04
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