Verfahren zur Abscheidung von ternären Oxid-Gatedielektrika und Strukturen, die dadurch gebildet werden

摘要

Methods and associated structures of forming a microelectronic device are described. Those methods may include introducing a first metal source, a second metal source and an oxygen source into a chamber and then forming a ternary oxide film comprising a first percentage of the first metal, a second percentage of the second metal, and a third percentage of oxygen.