| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for stably forming a high-precision fine pattern for use in a process of producing a semiconductor such as an IC, in a production of a circuit board for a liquid crystal, a thermal head and the like, and in other photofabrications, and to provide a resin composition used for the method, a developer for the method, and a rinsing solution for negative development used in the method. <P>SOLUTION: The pattern forming method includes: (I) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (II) exposing the resist film; and (III) developing the resist film with a negative developer. The invention also provides a positive resist composition for multiple-development used in the method, a developer for use in the method, and a rinsing solution for negative development used in the method. <P>COPYRIGHT: (C)2011,JPO&INPIT |
