| 摘要 |
A semiconductor light emitting diode (1, LED), comprising a first and a second electrode (40, 11) for applying a voltage across an active region (4) for generation of light, a light emitting surface (6), and a plurality of photonic crystals (101, 102). Further, at least two photonic crystals (101, 102) of a first and a second type are adapted to extract light from the active region (4) and differ from each other with respect to at least one lattice parameter. Each of said at least two photonic crystals (101, 102) are associated with a respective far field pattern, wherein an arrangement of said plurality of photonic crystals (101, 102) is provided to arrange said at least two photonic crystals (101, 102). In this manner, a far field pattern is created by combining the respective far field patterns associated with each of said at least two photonic crystals (101, 102).
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