| 摘要 |
A reverse-conducting semiconductor device (RC-IGBT) including a freewheeling diode and an insulated gate bipolar transistor (IGBT), and a method for making the RC-IGBT are provided. A wafer has first and second sides emitter and collector sides of the IGBT, respectively. At least one layer of a first or second conductivity type is created on the second side before at least one layer of a different conductivity type is created on the second side. The at least one layer of the first or second conductivity type and the at least one layer of the different conductivity type are arranged alternately in the finalized RC-IGBT. A second electrical contact, which is in direct electrical contact with the layers of the first or second and different conductivity types, is created on the second side. A shadow mask is applied on the second side, and the layer of the first or second conductivity type is created through the shadow mask. Another layer of the first or second conductivity type can be created on the second side, and a shadow mask is applied on the other layer of the first or second conductivity type, and at least one electrically conductive island, which is part of a second electrical contact in the finalized RC-IGBT, is created through the shadow mask. The electrically conductive island is used as a mask for the creation of the layer of the different conductivity type, and those parts of the other layer of the first conductivity type which are covered by an electrically conductive island form the layer of the first or second conductivity type.
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