| 摘要 |
<p>Disclosed is an SOI wafer which has a high gettering ability for metal impurities. Specifically disclosed is an SOI water (10) in which a BOX (buried oxide) layer (2) is formed on top of a supporting substrate (1) by thermal oxidation. A gettering layer (3), which is formed from a silicon that contains one of the combinations of oxygen, oxygen and carbon, oxygen and nitrogen, and oxygen, carbon and nitrogen, is formed directly on the BOX layer (2). An S layer (4) that is formed from single crystal silicon is formed directly on the gettering layer (3) for formation of a semiconductor element.</p> |
