| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a reaction furnace for a dry cleaning device which is superior in economy by reducing a supply amount of cleaning gas by improving the efficiency of a cleaning processing for an object to be cleaned. <P>SOLUTION: The device for cleaning the contaminated component of a nitride semiconductor manufacturing apparatus includes a reaction chamber 8 having a cleaning gas introduction pipe 16 and a gas exhaust pipe 20, a support means 4 of supporting the contaminated component 22 in the reaction chamber 8, heat shielding members 7a, 7b configured to hold the contaminated component 22 at high temperature in the reaction chamber 8, and a heating means 3 of heating the inside of the reaction chamber 8, the cleaning gas introduction pipe 16 being arranged at a lower position in the reaction chamber 8. Consequently, the cleaning gas supplied from a lower part in the reaction chamber 8 is heated by the heating means 3 to move up and then efficiently react on contaminants on the contaminated component 22, thereby efficiently cleaning the contaminated component 22. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
