| 摘要 |
<p>Disclosed is a method for forming a graphene film, wherein a film of a metal M reactive with a carbide, such as an Si film, which is formed on an insulating layer that is formed from a substance not reactive with carbon, such as an Si/SiO2 insulating layer, is carbonized with a hydrocarbon gas such as an ethylene gas, thereby modifying the Si film into a film of SiC that is a reaction product, and a graphene film is formed on the SiC film. By using a material/process based on an Si substrate or the like, a high quality graphene film can be produced. A substrate comprising the graphene film is applicable to many devices.</p> |
