| 摘要 |
Provided is a fabrication method of a noble metal nanowire. More specifically, provided is a fabrication method of a noble metal nanowire, wherein the noble metal nanowire having an epitaxial relation with a single crystal substrate is fabricated on the single crystal substrate using noble metal halide as a precursor by placing the precursor in a front portion of a reactor and the single crystal substrate in a rear portion of the reactor and performing heat treatment in a condition that an inert gas flows from the front portion of the reactor to the rear portion of the reactor under a predetermined pressure, wherein a major axial direction of the noble metal nanowire with respect to a surface of the single crystal substrate is controlled by controlling a temperature of the precursor.
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