发明名称 |
A MEMORY CELL, AN ARRAY, AND A METHOD FOR MANUFACTURING A MEMORY CELL |
摘要 |
<p>A memory cell (100) comprising a transistor, the transistor comprising a substrate (101), a first source/drain region (102), a second source/drain region (112), a gate (104) and a gate insulating layer (103) positioned between the substrate (101) and the gate (104), wherein the gate insulating layer (103) is in a direct contact with the substrate (101) and comprises charge traps (131) distributed over an entire volume of the gate insulating layer (101).</p> |
申请公布号 |
WO2010122470(A1) |
申请公布日期 |
2010.10.28 |
申请号 |
WO2010IB51685 |
申请日期 |
2010.04.19 |
申请人 |
NXP B.V.;GOLUBOVIC, DUSAN |
发明人 |
GOLUBOVIC, DUSAN |
分类号 |
H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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