| 摘要 |
Methods and compositions for depositing a metal containing thin film on a substrate comprises introducing a vapor phase metal-organic precursor into a reaction chamber containing one or more substrates. The precursor has at least one beta-diketiminato ligand, and has the general formula: <?in-line-formulae description="In-line Formulae" end="lead"?>M(R1C(NR4)CR2C(NR5)R3)2Ln <?in-line-formulae description="In-line Formulae" end="tail"?> wherein M is a metal selected from nickel, cobalt, ruthenium, iridium, palladium, platinum, silver and gold. Each of R1-5 is an organic ligand independently selected from H; and a C1-C4 linear or branched, alky group, alkylsilyl group, alkylamide group, alkoxide group, or alkylsilylamide group. Each L is independently selected from: a hydrocarbon; an oxygen-containing hydrocarbon; an amine; a polyamine; a bipyridine; an oxygen containing heterocycle; a nitrogen containing heterocycle; and combinations thereof; and n is an integer ranging from 0 to 4, inclusive. A metal containing film is deposited onto the substrate, while the substrate is maintained at a temperature between about 100° C. and about 500° C. |
