发明名称 Process of forming an electronic device including a conductive structure extending through a buried insulating layer
摘要 A process of forming an electronic device can include providing a semiconductor-on-insulator substrate including a substrate, a first semiconductor layer, and a buried insulating layer lying between the first semiconductor layer and the substrate. The process can also include forming a field isolation region within the semiconductor layer, and forming an opening extending through the semiconductor layer and the buried insulating layer to expose the substrate. The process can further include forming a conductive structure within the opening, wherein the conductive structure abuts the substrate.
申请公布号 US7820519(B2) 申请公布日期 2010.10.26
申请号 US20060556544 申请日期 2006.11.03
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 ROGGENBAUER TODD C.;KHEMKA VISHNU K.;ZHU RONGHUA;BOSE AMITAVA;HUI PAUL;HUANG XIAOQIU;WONG VAN
分类号 H01L21/331 主分类号 H01L21/331
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