发明名称 Thin film transistor substrate and fabricating method thereof
摘要 A thin film transistor substrate and fabricating method thereof by which the size of the thin film transistor substrate is reduced by constructing data signal supply lines, each of which supplies a pixel data voltage to a data line, with different metal lines, respectively includes gate and data lines crossing each other on a substrate, with a gate insulating layer disposed therebetween, a thin film transistor formed on each intersection between the gate and data lines, a display area on which a pixel electrode connected to the thin film transistor is formed, a first data signal supply line comprising a first conductive layer connected to the data line in a non-display area located at a periphery of the display area, and a second data signal supply line alternating with the first data signal supply line, with the gate insulating layer disposed therebetween, the second data signal supply line comprising a second conductive layer connected to the data line.
申请公布号 US7821040(B2) 申请公布日期 2010.10.26
申请号 US20070949863 申请日期 2007.12.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEONG SEOK-JE;JEONG KI-HUN;CHOI JIN-YOUNG
分类号 H01L29/786;H01L21/8234 主分类号 H01L29/786
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