发明名称 |
Nitride-based light emitting device and manufacturing method thereof |
摘要 |
A light emitting device according to an exemplary embodiment of the present invention includes: an n-type cladding layer; a p-type cladding layer; an active layer interposed between the n-type cladding layer and the p-type cladding layer; and an ohmic contact layer contacting the p-type cladding layer or the n-type cladding layer and comprising a first film that comprises a transparent conductive zinc oxide having a one-dimensional nano structure, wherein the one-dimensional nano structure is at least one selected from a nano-column, a nano rod, and a nano wire.
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申请公布号 |
US7820463(B2) |
申请公布日期 |
2010.10.26 |
申请号 |
US20080192360 |
申请日期 |
2008.08.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG JUNE O |
分类号 |
H01L21/00;H01L33/06;H01L21/44;H01L33/20;H01L33/32;H01L33/40 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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