SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: The semiconductor light emitting device maximizes the surface area of substrate. The extrication of the photon through substrate is induced and the external quantum efficiency is improved. CONSTITUTION: A type semiconductor layer is formed on the light-transmissive substrate. The active layer is formed on N type semiconductor layer. The p-type semiconductor layer is formed on the active layer. The P-type pad electrode is formed on the p-type semiconductor layer. N type electrode is formed on the domain etching a part of N type semiconductor layer.