APPARATUS AND METHOD FOR PLASMA ION DOPING

摘要

PURPOSE: The plasma ion doping device and plasma ion-doping method prevent from electronicses being inserted within wafer. It is offered so that the equal ion implantation be included. CONSTITUTION: The processing chamber(10) defines the space(11) shut tightly. The platen(12) has the conductivity plane for supporting the wafer(W). The process gas source(36) is connected through the flux controller(38) to the processing chamber. It changes the pressure of the processing chamber inside into signal and the pressure sensor(44) offers to the controller(42).