| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is improved in normally-off characteristics, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device 1 includes nitride-based semiconductor layers 3 to 5 with a recess 16 formed partially on one principal surface 5a, a source electrode 7 formed on the one principal surface 5a, a drain electrode 8 provided on the one principal surface 5a on the opposite side of the source electrode 7 across the recess 16, an insulating layer 6 formed on both sides across the recess 16 of the one principal surface 5a and having a tilting wall surface 17 on the side of the recess 16, and a gate electrode 10 provided on a bottom 16a and a side 16b of the recess 16 and on a wall surface 17 of the insulating layer 6 on the side of the recess 16. A tilt angleβof the wall surface 17 of the insulating layer 6 is larger than a tilt angleαof the side 16b of the recess 16. COPYRIGHT: (C)2011,JPO&INPIT |
