| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that gate withstanding power is lower in an end region of a trench gate or an edge or a peripheral portion of a cell region than that in the cell region, and a concentration of damage is caused at the periphery of a chip in a semiconductor device having a trench gate such as a MOSFET. SOLUTION: A pattern for improving gate withstanding power is provided in an end region of a trench gate at the edge or the periphery of the cell region. When a right-angled portion is formed at a corner of the cell region of a trench gate (i.e., an end region of a trench gate), the right-angled portion is connected by a curved trench gate having a curvature radius as large as possible so that the right-angled portion can be chamfered. A trench gate surrounding the outer periphery of the cell region is also provided so that the corners are connected by a curved trench gate having a large curvature radius. In addition, a non-intersecting pattern where the trench gates do not cross orthogonally is formed at the edge of the cell region. COPYRIGHT: (C)2011,JPO&INPIT
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