| 发明名称 |
PATTERNING METHOD, AND FIELD EFFECT TRANSISTORS |
| 摘要 |
A patterning method with a filling material with a T-shaped cross section is used as a mask during patterning to produce structures having sublithographic dimensions, such as a double-fin field effect transistor.
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| 申请公布号 |
US2010264472(A1) |
申请公布日期 |
2010.10.21 |
| 申请号 |
US20100830048 |
申请日期 |
2010.07.02 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
FEHLHABER RODGER;TEWS HELMUT |
| 分类号 |
H01L29/78;H01L21/033;H01L21/308;H01L21/336;H01L29/423;H01L29/786 |
主分类号 |
H01L29/78 |
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