| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve stability and reproducibility of a plasma process by stably and smoothly performing a matching operation of a matcher even when RF power fed to plasma is varied over a wide range (in particular, when a lower power range is selected) or when impedance of the plasma varies large. <P>SOLUTION: In a capacity coupling type plasma etching device, a high-frequency power source 28 is electrically connected to a susceptor 12 mounted with a semiconductor wafer W in a chamber 10 through a matching unit 30 and a feed rod 32. A portion of the RF power is branched to and absorbed by an RF power branch absorption unit 44 halfway on the feed rod 32 or behind a matcher in the matching unit 30 to reduce variation in apparent load impedance viewed from the matcher. <P>COPYRIGHT: (C)2011,JPO&INPIT |
