发明名称 PHOTOMASK BLANK AND PHOTOMASK
摘要 <P>PROBLEM TO BE SOLVED: To provide a photomask blank, giving higher dimensional control performance to a photomask, and a photomask, produced using the photomask blank. <P>SOLUTION: The photomask blank includes on a transparent substrate: a light shielding film which may contain transition metals and is formed of silicon material; and an etching film, which is formed of chromium compound material and all separated in one process in the course of working from the photomask blank into a photomask. The etching mask film is deposited by reactive sputtering, and formed of a multi-layer including two or more layers different in composition from one another. When the multi-layer is deposited as a single composition layer on the transparent substrate, the photomask blank comprises by combining a layer made of material imparting compression stress and a layer made of material imparting tensile stress. By using the photomask blank, before and after removing the etching mask film by etching, a change in surface topography is a little, whereby it is possible to improve pattern controllability of a photomask obtained after the end of photomask processing. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010237499(A) 申请公布日期 2010.10.21
申请号 JP20090086145 申请日期 2009.03.31
申请人 SHIN-ETSU CHEMICAL CO LTD 发明人 INAZUKI SADAOMI;KANEKO HIDEO;YOSHIKAWA HIROKI
分类号 G03F1/50;G03F1/54 主分类号 G03F1/50
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