WRITE-IN CONDITION SETTING METHOD FOR MAGNETIC MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a write-in condition setting method for a magnetic memory device for precisely optimizing write-in conditions.

SOLUTION: The invention includes: a first adjusting step for performing first write-in condition setting for a plurality of magnetic memory cells; a step (S1160) for determining that the magnetic memory cells of which write-in conditions are optimized in the first adjusting step can be used as memory devices that can write in or read out data any time; a second adjusting step for performing second write-in condition setting for a plurality of magnetic memory cells other than those of which write-in conditions are optimized in the first adjusting step; a step (S1170) for determining that the magnetic memory cells of which write-in conditions are optimized in the second adjusting step can be used as read only memory devices that can electrically write in data only once; and a step for determining as defective the magnetic memory cells other than those the write-in conditions of which are optimized in the second adjusting step.

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