| 摘要 |
The invention relates to a method for restructuring a semiconductor layer (2) with a multiplicity of lasers (18, 20, 22) which are arranged next to one another and, by means of respectively assigned beam shaping optics (46, 48, 50), project on the semiconductor layer (2) laser lines (8, 10, 12) arranged next to one another, with marginal regions (15, 17) and inner overlapping regions (14, 16), wherein at least the overlapping regions (14, 16) are projected completely and on passive regions (14, 16) of the semiconductor layer (2) in which the semiconductor layer is removed in a following processing step, and relates to a laser system for carrying out the method. |
