发明名称 CONJUGATED ICP AND ECR PLASMA SOURCES FOR WIDE RIBBON ION BEAM GENERATION AND CONTROL
摘要 An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
申请公布号 WO2010120569(A2) 申请公布日期 2010.10.21
申请号 WO2010US29583 申请日期 2010.04.01
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES;BILOIU, COSTEL;SCHEUER, JAY, T.;PEREL, ALEXANDER, S. 发明人 BILOIU, COSTEL;SCHEUER, JAY, T.;PEREL, ALEXANDER, S.
分类号 H01L21/265;H05H1/24;H05H1/34 主分类号 H01L21/265
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