| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve an in-plane uniformity of plasma density and plasma processing characteristics. <P>SOLUTION: A plasma processing apparatus 10 includes: a processing chamber 100 in which a plasma process is performed on a wafer W; a first high frequency power supply 140 configured to output a high frequency power; a high frequency antenna 120 including an outer coil, an inner coil and n (n is an integer equal to or greater than 1) number of intermediate coil(s) that are concentrically wound about a central axis outside the processing chamber 100; and a dielectric window 105 constituting a part of a wall surface of the processing chamber 100 and configured to introduce electromagnetic field energy generated from the high frequency antenna 120 into the processing chamber 100. <P>COPYRIGHT: (C)2011,JPO&INPIT |
