TITANIUM TARGET FOR SPUTTERING

摘要

PROBLEM TO BE SOLVED: To provide a titanium target for sputtering having high quality capable of reducing the amount of impurities causing particles or abnormal discharge phenomenon, preventing occurrence of any crack even during the high-power sputtering (the high-speed sputtering), stabilizing the sputtering characteristic, and effectively suppressing generation of particles during the film deposition. SOLUTION: The titanium target for sputtering of high purity contains 3-10 mass ppm S and 0.5-3 mass ppm Si as additive components while the purity of the target is≥99.995 mass% except the additive components and gas components. COPYRIGHT: (C)2011,JPO&INPIT