| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a support substrate to be bonded to a single crystal wafer and to provide a method of manufacturing the support substrate. <P>SOLUTION: The support substrate 30 to be bonded to a single crystal wafer consisting of a single crystal body comprises a silicon carbide polycrystal substrate 10 consisting of a polycrystal of silicon carbide and a coat layer 20 vapor-deposited on the silicon carbide polycrystal substrate 10, wherein the coat layer 20 comprises silicon carbide or silicon, comes into contact with a single crystal wafer and an arithmetic average roughness of a contact surface 22 of the coat layer 20 in contact with the single crystal wafer is 1 nm or less. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
