| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve accuracy of film thickness measurement of a translucent dielectric layer. <P>SOLUTION: The acoustic wave element 8 includes a piezoelectric element 9, an IDT electrode 10 formed on the piezoelectric element 9, and a translucent dielectric layer 12 formed on the piezoelectric element 9 to cover at least a part of the IDT electrode 10, and is structured to include a reflective film 14 formed on the piezoelectric element 9 to be covered with the translucent dielectric layer 12, and having reflectivity higher than that of the piezoelectric element 9 in a visible light wavelength range. By virtue of this structure, when measuring the film thickness of the translucent dielectric layer 12 by a film thickness measurement method by a light interference method after forming the translucent dielectric layer 12 in a manufacturing process of the acoustic wave element 8, the reflected light from the reflective film 14 having higher reflectivity than that of the piezoelectric element 9 in the visible light wavelength range can be used. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
