发明名称 |
Low Temperature Junction Growth Using Hot-Wire Chemical Vapor Deposition |
摘要 |
A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.
|
申请公布号 |
US2010263717(A1) |
申请公布日期 |
2010.10.21 |
申请号 |
US20070742001 |
申请日期 |
2007.11.09 |
申请人 |
ALLIANCE FOR SUSTAINABLE ENERGY, LLC |
发明人 |
WANG QI;PAGE MATTHEW;IWANICZKO EUGENE;WANG TIHU;YAN YANFA |
分类号 |
H01L31/0352;H01L21/20;H01L21/205;H01L29/02 |
主分类号 |
H01L31/0352 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|