发明名称 Low Temperature Junction Growth Using Hot-Wire Chemical Vapor Deposition
摘要 A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.
申请公布号 US2010263717(A1) 申请公布日期 2010.10.21
申请号 US20070742001 申请日期 2007.11.09
申请人 ALLIANCE FOR SUSTAINABLE ENERGY, LLC 发明人 WANG QI;PAGE MATTHEW;IWANICZKO EUGENE;WANG TIHU;YAN YANFA
分类号 H01L31/0352;H01L21/20;H01L21/205;H01L29/02 主分类号 H01L31/0352
代理机构 代理人
主权项
地址