SELF-BOOTSTRAPPING FIELD EFFECT DIODE STRUCTURES AND METHODS
摘要
A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.
申请公布号
WO2010080855(A3)
申请公布日期
2010.10.21
申请号
WO2010US20284
申请日期
2010.01.06
申请人
ANKOUDINOV, ALEXEI;RODOV, VLADIMIR;LAKOTA TECHNOLOGIES INC.