发明名称 SELF-BOOTSTRAPPING FIELD EFFECT DIODE STRUCTURES AND METHODS
摘要 A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.
申请公布号 WO2010080855(A3) 申请公布日期 2010.10.21
申请号 WO2010US20284 申请日期 2010.01.06
申请人 ANKOUDINOV, ALEXEI;RODOV, VLADIMIR;LAKOTA TECHNOLOGIES INC. 发明人 ANKOUDINOV, ALEXEI;RODOV, VLADIMIR
分类号 H01L29/861;H01L29/872 主分类号 H01L29/861
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