APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

摘要

Disclosed is an apparatus (1) for producing a silicon carbide single crystal, which comprises: a reaction container main body (11) that is opened at the top and holds a sublimation material (50) in the bottom portion (11a); a cover member (12) for covering the upper opening (11b) of the reaction container main body (11); and a cylindrical guide member (70) that is arranged within the reaction container main body (11) for the purpose of guiding the growth of a silicon carbide single crystal when the silicon carbide single crystal is grown from a seed crystal (60). The guide member (70) is separably configured of a first split body and a second split body.