发明名称 |
INTERLAYER INSULATION FILM, INTERCONNECT STRUCTURE, AND METHODS FOR PRODUCTION THEREOF |
摘要 |
<p>An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable.</p> |
申请公布号 |
EP2117037(A4) |
申请公布日期 |
2010.10.20 |
申请号 |
EP20080711851 |
申请日期 |
2008.02.22 |
申请人 |
ZEON CORPORATION |
发明人 |
OHMI, TADAHIRO;YASUDA, SEIJI;INOKUCHI, ATSUTOSHI;MATSUOKA, TAKAAKI;KAWAMURA, KOHEI;NAKAMURA, MASAHIRO |
分类号 |
H01L21/314;H01L21/768;H01L23/522 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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